Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93131
Reference12 articles.
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4. Decomposition Pressure of Co3O4Determined from Electrical Conductivity Measurements
5. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices
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1. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989
2. Two Dimensional Electron Gas Fet;The Physics of Submicron Semiconductor Devices;1988
3. Chapter 3 Two-Dimensional Electron Gas FETs: Microwave Applications;Semiconductors and Semimetals;1987
4. Self‐aligned enhancement‐mode and depletion‐mode GaAs field‐effect transistors employing the δ‐doping technique;Applied Physics Letters;1986-12-22
5. The effect of the two‐dimensional gas degeneracy on theI‐Vcharacteristics of the modulation‐doped field‐effect transistor;Journal of Applied Physics;1986-08
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