Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices-Reference-Cited by-同舟云学术

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Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

Published:2017-06-05 Issue:23 Volume:110 Page:233504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo M. Q.¹²³,Chen Y. C.³,Lin C. Y.⁴,Chang Y. F.³^ORCID,Fowler Burt³,Li Q. Q.¹²,Lee J.³,Zhao Y. G.¹²

Affiliation:

1. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

3. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

4. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985070

Reference30 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Nanoionics-based resistive switching memories

3. Trilayer Tunnel Selectors for Memristor Memory Cells

4. A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

5. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

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