Defect‐molecule model calculations of 3dtransition metal ions in II‐VI semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344249
Reference21 articles.
1. Theoretical Evidence for Low-Spin Ground States of Early Interstitial and Late Substitutional3dTransition-Metal Ions in Silicon
2. Theory of 3d Transition Atom Impurities in Semiconductors
3. Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions
4. Transition-Metal Impurities in Semiconductors—Their Connection with Band Lineups and Schottky Barriers
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