Near-field control and imaging of free charge carrier variations in GaN nanowires-Reference-Cited by-同舟云学术

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Near-field control and imaging of free charge carrier variations in GaN nanowires

Published:2016-02-15 Issue:7 Volume:108 Page:073101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Berweger Samuel,Blanchard Paul T.,Brubaker Matt D.,Coakley Kevin J.,Sanford Norman A.,Wallis Thomas M.,Bertness Kris A.,Kabos Pavel

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942107

Reference35 articles.

1. Toward Nanowire Electronics

2. Nanomaterials in transistors: From high-performance to thin-film applications

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Nanometer-sized semiconductor clusters: materials synthesis, quantum size effects, and photophysical properties

5. Spontaneously grown GaN and AlGaN nanowires

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1. Quantitative measurement of local conductivity of SnO₂ nanobelt field effect transistor utilizing microwave atomic force microscopy;Applied Physics Express;2022-12-21

2. Charge carrier dynamics in 2D materials probed by ultrafast THzspectroscopy;Advances in Physics: X;2022-09-30

3. Advanced atomic force microscopies and their applications in two-dimensional materials: a review;Materials Futures;2022-09-01

4. Effect of p-type doping on the electronic characteristics of negative electron affinity Al0.5Ga0.5N nanowire photocathodes;Journal of Materials Research and Technology;2022-07

5. Application of Near-Field Scanning Microwave Microscopy in Liquid Environment;IEEE Access;2022

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