Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN-Reference-Cited by-同舟云学术

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Published:2015-01-28 Issue:4 Volume:117 Page:045710
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gunning Brendan P.¹^ORCID,Fabien Chloe A. M.¹,Merola Joseph J.¹,Clinton Evan A.¹,Doolittle W. Alan¹,Wang Shuo²^ORCID,Fischer Alec M.²,Ponce Fernando A.²

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

Funder

National Science Foundation

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/1.4906464

Reference61 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

3. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition

4. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

5. Effect of growth conditions on electrical properties of Mg-doped p-GaN

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relevance of Substrate Temperature and Ga Kinetics on Mg Doping in GaN by Plasma-Assisted Molecular Beam Epitaxy;Crystal Growth & Design;2024-08-13

2. Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities;ACS Nano;2024-05-20

3. Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition;physica status solidi (a);2024-03-12

4. Cathodoluminescence investigation of defect states in n- and p-type AlN;Applied Physics Letters;2024-01-29

5. Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation;Journal of Applied Physics;2024-01-11