Luminescence from Nd- and Dy-ion-implanted 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202691
Reference22 articles.
1. Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm
2. Er3+ ions–Si nanocrystals interactions and their effects on the luminescence properties
3. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
4. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
5. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
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1. Synthesis, microstructure, and photoluminescence properties of thornlike SiC:Tb nanostructures;Journal of Materials Research;2010-06
2. Observation of visible cathodoluminescence from Nd- and Dy-ion-implanted Si;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-03
3. Synthesis of Nd-doped Si thin films by laser ablation;physica status solidi (c);2010-01-07
4. Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission;Applied Physics Letters;2009-06-29
5. Investigation of luminescence from SiC nano-granule films on porous glass substrate;Optoelectronics Letters;2008-11
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