Influence of gas flow stoichiometry on the luminescence of organometallic-vapor-phase-grown ZnxCd1−xSe epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126132
Reference12 articles.
1. Surface morphology changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy
2. Optimization of interface parameters and bulk properties in ZnSe‐GaAs heterostructures
3. Depth-resolved cathodoluminescence study of ZnxCd1−xSe epilayer grown on (001) InP by metal organic chemical vapor phase deposition
4. Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates
5. Molecular beam epitaxial growth of high quality Zn1−xCdxSe on InP substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (100) substrates by metalorganic chemical vapor deposition;Journal of Crystal Growth;2005-06
2. Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs;Applied Physics Letters;2001-08-20
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