An analysis of phase shifts in photoreflectance spectra of strained Si/Si1−xGexstructures forx<0.24
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359739
Reference13 articles.
1. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection
2. Heterojunction bipolar transistors using Si-Ge alloys
3. Photoreflectance spectroscopy of pseudomorphic Si1−XGex (100) structures (x<0·26)
4. Photoreflectance of single buried Si1−xGexepilayers (0.12
5. Third-derivative modulation spectroscopy with low-field electroreflectance
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1. Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods;Semiconductor Science and Technology;2001-01-22
2. Photomodulated reflectance study ofInxGa1−xAs/GaAs/AlAsmicrocavity vertical-cavity surface emitting laser structures in the weak-coupling regime: The cavity/ground-state-exciton resonance;Physical Review B;1999-01-15
3. Observation of graded interfaces in strained Si/Si 1−x Ge x layers (0.17 < x < 0.23) using photoreflectance;Applied Surface Science;1998-01
4. Airy function analysis of Franz–Keldysh oscillations in the photoreflectance spectra of In1−xGaxAsyP1−y layers;Journal of Applied Physics;1997-09-15
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