Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering-Reference-Cited by-同舟云学术

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Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

Published:2017-05 Issue:18 Volume:110 Page:183501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ji Hyunjin¹,Lee Gwanmu¹²,Joo Min-Kyu²³,Yun Yoojoo¹²,Yi Hojoon¹²,Park Ji-Hoon²³,Suh Dongseok¹²,Lim Seong Chu¹²

Affiliation:

1. Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, South Korea

2. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, South Korea

3. Sungkyunkwan University (SKKU), Suwon 16419, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4982680

Reference29 articles.

1. Thickness-dependent mobility in two-dimensional MoS2transistors

2. Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

3. High Performance Multilayer MoS2 Transistors with Scandium Contacts

4. Screening and interlayer coupling in multilayer MoS2

5. Influence of post-annealing on the off current of MoS2 field-effect transistors

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