Growth and properties of CdS epitaxial layers by the close‐spaced technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663813
Reference34 articles.
1. The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors
2. Epitaxial Films of Germanium Deposited on Sapphire via Chemical Vapor Transport
3. Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process
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