Calculation of high‐field diffusivity by a many‐particle Monte Carlo simulation including a complete band structure for GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333811
Reference10 articles.
1. Calculation of the hot electron diffusion rate for GaAs
2. Generalization of Fick's Law for Non-Local Complex Diffusion in Semiconductors
3. Band-structure-dependent transport and impact ionization in GaAs
4. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
5. Monte Carlo simulation of impact ionization in GaAs including quantum effects
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3. Modeling the steady-state collector current of AlGaAs/GaAs heterojunction bipolar transistors using a generalized drift-diffusion. Equation;physica status solidi (a);1990-03-16
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