Single‐transverse‐mode injection lasers with embedded stripe layer grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89009
Reference15 articles.
1. HERMITE‐GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS
2. Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation
3. A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser
4. Striped-substrate double-heterostructure lasers
5. Very‐Low‐Current Operation of Mesa‐Stripe‐Geometry Double‐Heterostructure Injection Lasers
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1. Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr4;Journal of Crystal Growth;1998-06
2. Polycrystal isolation of InGaP/GaAs HBTs to reduce collector capacitance;IEEE Electron Device Letters;1998-02
3. Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode;IEEE Transactions on Electron Devices;1998
4. Molecular Beam Epitaxy From Research to Manufacturing;MRS Bulletin;1995-04
5. Comparison of Be and C diffusion in heavily doped polycrystalline GaAs;Applied Physics Letters;1994-10-17
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