Determination of lattice mismatch in Ga1−xAlxAs LPE layer on GaAs substrate by using a divergent x‐ray source
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326179
Reference9 articles.
1. Etch Pit Studies of GaP Liquid Phase Epitaxial Layers
2. Interface stress of AlxGa1−xAs–GaAs layer structures
3. Thermal Expansion of AlAs
4. Strain‐induced degradation of GaAs injection lasers
5. Degradation of CW GaAs double-heterojunction lasers at 300 K
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1. Investigation of the structural, electronic, optical, elastic, and thermodynamic properties of the zinc blende Ga1-xAlxAs1-yPy quaternary alloys: A DFT-Based simulation;Materials Science in Semiconductor Processing;2021-05
2. Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers;Journal of Crystal Growth;1997-02
3. X‐Ray Topography and Precision Diffractometry of Semiconducting Materials;Journal of The Electrochemical Society;1989-11-01
4. Simultaneous Bragg diffraction of X-rays from liquid-phase epitaxial thin films;Acta Crystallographica Section A;1981-11-01
5. Bragg angle measurement and mapping;Journal of Crystal Growth;1981-11
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