Effect of hydrogen dilution on the properties and bonding in plasma‐deposited silicon nitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352130
Reference11 articles.
1. Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation
2. Characterization of Plasma Silicon Nitride Layers
3. Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma
4. Physical‐Electrical Properties of Silicon Nitride Deposited by PECVD on III–V Semiconductors
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2. Characterization and versatile applications of low hydrogen content SiOCN grown by plasma-enhanced chemical vapor deposition;Journal of Applied Physics;2014-09-14
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