Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334631
Reference10 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Indium tin oxide contacts to gallium nitride optoelectronic devices
4. InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN
5. Low-resistance ohmic contacts to p-type GaN
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