Raman scattering measurement of the free‐carrier concentration and of the impurity location in boron‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323876
Reference15 articles.
1. ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 ‐ keV ANTIMONY ION BOMBARDMENT OF SILICON
4. On amorphous layer formation in silicon by ion implantation
5. Profiles of boron implantations in silicon measured by secondary ion mass spectrometry
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