High-pressure Raman scattering in wurtzite indium nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3609327
Reference19 articles.
1. Indium Nitride and Related Alloys
2. In-polar InN grown by plasma-assisted molecular beam epitaxy
3. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys
4. Electronic structure and effective masses of InN under pressure
5. Raman scattering study of anharmonic phonon decay in InN
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1. Thermodynamic property derivatives of the electronic and static dielectric constants: A simple Grüneisen parameter approach;Journal of Applied Physics;2024-08-22
2. Synthesis of Size-Tunable Indium Nitride Nanocrystals;The Journal of Physical Chemistry Letters;2023-04-10
3. Pressure-softening of zone-edge TA phonons and the fourfold to sixfold phase change;Physical Review B;2021-08-04
4. Low temperature growth of polycrystalline InN films on non-crystalline substrates by plasma-enhanced atomic layer deposition;Applied Surface Science;2018-11
5. Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN;Physical Review B;2018-10-16
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