The effect of Fowler–Nordheim tunneling current on thin SiO2metal‐oxide‐semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334399
Reference16 articles.
1. Hole traps in silicon dioxide
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3. Dielectric instability and breakdown in SiO2 thin films
4. Impact ionization and positive charge in thin SiO2films
5. Current runaway in insulators affected by impact ionization and recombination
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