Broadband SiGe∕Si quantum dot infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2433768
Reference15 articles.
1. Fabrication of quantum well microcantilever photon detectors
2. Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure
3. Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions
4. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K
5. Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum
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