High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120667
Reference8 articles.
1. 10 W near-diffraction-limited peak pulsed power from Al-free, 0.98 [micro sign]m-emitting phase-locked antiguided arrays
2. Single mode multiple-element laser array with grating filter
3. Antiguided laser array structure at 1.48 µm fabricated without overgrowth
4. Optimization of long wavelength InGaAsP strained quantum-well lasers
5. Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasers
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1. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate;Applied Physics Letters;2015-07-27
2. The Near-Diffraction-Limited Operation of Positive Index-Guided Submicrometer-Ridge Laser Arrays;IEEE Journal of Quantum Electronics;2009-08
3. Solvothermal synthesis of MnF2 nanocrystals and the first-principle study of its electronic structure;Journal of Physics and Chemistry of Solids;2009-03
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5. GaAs Nanocrystals via Hydrothermal Redox Reaction;Chemistry Letters;2004-04
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