Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2910768
Reference13 articles.
1. Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga2O3
2. Epitaxial relationship between wurtzite GaN and β-Ga2O3
3. Epitaxial Growth of GaN on (1 0 0) β-Ga2O3Substrates by Metalorganic Vapor Phase Epitaxy
4. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
5. Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature
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