Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. II. Photochemical‐vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360071
Reference38 articles.
1. Initial stage oxidation of the Ge:Si(111)‐(5×5) and Ge:Si(111)‐(7×7) surfaces
2. The photo-induced reaction of disilane with the Si(100) and Si(100)(2 × 1):D surfaces
3. Deposition of high‐quality a‐Si:H by direct photodecomposition of Si2H6 using vacuum ultraviolet light
4. Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si : H from SiH4
5. Low‐temperature (600–650 °C) silicon epitaxy by excimer laser‐assisted chemical vapor deposition
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1. Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth;The Journal of Physical Chemistry C;2013-12-24
2. Si2H6Dissociative Chemisorption and Dissociation on Si(100)-(2×1) and Ge(100)-(2×1);The Journal of Physical Chemistry C;2011-11-29
3. Real-time spectroellipsometric characterization of nucleation, islanding, and coalescence behavior of boron films grown by soft x-ray excited chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-05
4. Electronic and thermal reaction pathways in the synchrotron radiation-excited modification and epitaxy of silicon-based materials;Thin Solid Films;2007-04
5. Evolution of the surface roughness with the hydrogen partial pressure for high deposition rate of nanocrystalline silicon films;Journal of Non-Crystalline Solids;2002-04
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