Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices-Reference-Cited by-同舟云学术

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Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

Published:2016-07-18 Issue:3 Volume:109 Page:031906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Palacios-Huerta L.¹,Cabañas-Tay S. A.²^ORCID,Cardona-Castro M. A.²,Aceves-Mijares M.¹^ORCID,Domínguez-Horna C.³,Morales-Sánchez A.²

Affiliation:

1. Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México

2. Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México

3. Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona, Spain

Funder

Consejo Nacional de Ciencia y Tecnología (CONACYT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959080

Reference42 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2multilayer films

3. Electroluminescence of Si Nanocrystal-Doped SiO 2

4. The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides

5. Comparative study of Si precipitation in silicon-rich oxide films

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