1. Under high-injection condition, where the concentration of the injected minority carriers is comparable to that of the majority carriers, both the drift and diffusion currents play roles in the forward-biasedpndiode. It is known in this case that the ideality factor is equal to ∼2. See S. M. Sze and K. K. Ng ,Physics of Semiconductor Devices, 3rd ed. ( Wiley-Interscience, New Jersey, 2007), pp. 99–100.
2. It is pointed out that if the lifetime of the SRH recombination decreases with the injection level, the ideality factor of the corresponding recombination current approaches 1. See S. M. Sze and K. K. Ng ,Physics of Semiconductor Devices, 3rd ed. ( Wiley-Interscience, New Jersey, 2007), pp. 40–44 for more discussion.
3. Light-Emitting Diodes
4. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes