Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells-Reference-Cited by-同舟云学术

Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Published:2004-06 Issue:11 Volume:95 Page:6714-6716
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakatani Ryoichi,Yoshida Tetsuo,Endo Yasushi,Kawamura Yoshio,Yamamoto Masahiko,Takenaga Takashi,Aya Sunao,Kuroiwa Takeharu,Beysen Sadeh,Kobayashi Hiroshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1667433

Reference7 articles.

1. Progress and outlook for MRAM technology

2. Single-Domain Circular Nanomagnets

3. Interactions and switching field distributions of nanoscale magnetic elements

4. Ultrahigh density vertical magnetoresistive random access memory (invited)

5. Observation of a Bi-Domain State and Nucleation Free Switching in Mesoscopic Ring Magnets

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