Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interband‐tunneling structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114826
Reference15 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies;Physical Review B;2002-06-19
2. Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
3. Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling;Semiconductor Science and Technology;1999-01-01
4. Localized interface states and the optical spectra of AlSb/InAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
5. Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates;Journal of Electronic Materials;1997-12
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