Low dark current dual band infrared photodetector using thin AlAs barriers and Γ‐X mixed intersubband transition in GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111134
Reference17 articles.
1. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
2. Quantum‐well infrared photodetectors
3. Long-wavelength 128*128 GaAs quantum well infrared photodetector arrays
4. Noise gain and operating temperature of quantum well infrared photodetectors
5. Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors
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1. Dilute nitride based double-barrier quantum wells for intersubband absorption at 1.31 and1.55 μm;Physical Review B;2008-03-25
2. Quantum Dot Structures for Multi-band Infrared and Terahertz Radiation Detection;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
3. Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP;Semiconductor Science and Technology;2006-05-05
4. QWIP Detectors for the MWIR;Mid-infrared Semiconductor Optoelectronics;2006
5. Quantum structures for multiband photon detection;Opto-Electronics Review;2006-01-01
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