Localized ohmic contact through a passivation dielectric for solar cell rear surface design
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809820
Reference15 articles.
1. Silicon-based photovoltaics: State of the art and main lines of development
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3. Two‐dimensional numerical optimization study of the rear contact geometry of high‐efficiency silicon solar cells
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5. Record Large-Area p-Type CZ Production Cell Efficiency of 19.3% Based on LDSE Technology
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1. Characterizing Point Contacting by Localized Dielectric Breakdown and Its Use in Silicon Solar Cell Applications;IEEE Journal of Photovoltaics;2020-01
2. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes;AIP Advances;2018-03
3. Enhanced photovoltaic properties for rear passivated crystalline silicon solar cells by fabricating boron doped local back surface field;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2017-12
4. Origin of the Alternative Current (AC-) Gate Bias Improving the NBIS Stability of IGZO TFTs;ECS Solid State Letters;2015-11-09
5. Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell;Journal of Applied Physics;2015-07-28
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