Quantitative simulation of a resonant tunneling diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364151
Reference18 articles.
1. Role of carrier equilibrium in self-consistent calculations for double barrier resonant diodes
2. The I‐V characteristics of double‐barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetry
3. Quantum device simulation with a generalized tunneling formula
4. Multiband treatment of quantum transport in interband tunnel devices
5. Tight-binding model for GaAs/AlAs resonant-tunneling diodes
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