Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1461421
Reference12 articles.
1. Dielectric Polarization Noise in Low-Noise Si Junction Field-Effect Transistors at 77 K
2. Anomalous kink-related excess noise in MOSFETs at 4.2 K
3. Progress on readout electronics for far-infrared arrays
4. Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout
5. Channel length dependence of random telegraph signal in sub-micron MOSFET's
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