On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373477
Reference35 articles.
1. 1.5 nm direct-tunneling gate oxide Si MOSFET's
2. Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide
3. Modeling of high-energy electrons in MOS devices at the microscopic level
4. Oxide-field dependence of electron injection from silicon into silicon dioxide
5. Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method
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