Effect of strain on the Curie temperature and band structure of low-dimensional SbSI-Reference-Cited by-同舟云学术

Effect of strain on the Curie temperature and band structure of low-dimensional SbSI

Published:2018-04-30 Issue:18 Volume:112 Page:183104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Yiping¹^ORCID,Hu Yang¹²^ORCID,Chen Zhizhong¹,Guo Yuwei¹,Wang Dong³,Wertz Esther A.²,Shi Jian¹

Affiliation:

1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

2. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

3. Center for Microstructure Science, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5017490

Reference43 articles.

1. Above-bandgap voltages from ferroelectric photovoltaic devices

2. Power conversion efficiency exceeding the Shockley–Queisser limit in a ferroelectric insulator

3. Bandgap tuning of multiferroic oxide solar cells

4. Non-volatile memory based on the ferroelectric photovoltaic effect

5. Soft mode and its electronic potential in SbSI-type mixed crystals

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