The negative differential resistance behavior in delta‐doped GaAs structure due to resonant interband tunneling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351343
Reference14 articles.
1. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K
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5. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
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