Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy

Published:2006-10-09 Issue:15 Volume:89 Page:151909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang X. J.,Buyanova I. A.,Chen W. M.,Izadifard M.,Rawal S.,Norton D. P.,Pearton S. J.,Osinsky A.,Dong J. W.,Dabiran Amir

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2361081

Reference19 articles.

1. A comprehensive review of ZnO materials and devices

2. Thermoreflectance spectra of CdO: Band gaps and band-population effects

3. First principles calculations of the ground-state properties and structural phase transformation in CdO

4. Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy

5. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy

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