Study of defect properties and recombination mechanism in rubidium treated Cu(In, Ga)Se2 solar cells-Reference-Cited by-同舟云学术

Study of defect properties and recombination mechanism in rubidium treated Cu(In, Ga)Se2 solar cells

Published:2021-05-14 Issue:18 Volume:129 Page:183108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tangara Hamidou¹^ORCID,Zahedi-Azad Setareh²^ORCID,Not Jennifer³,Schick Jakob²^ORCID,Lafuente-Sampietro Alban¹^ORCID,Islam Muhammad Monirul¹⁴^ORCID,Scheer Roland²^ORCID,Sakurai Takeaki¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan

2. Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle, Germany

3. Polytech Grenoble, Université Grenoble Alpes, 38400 Saint-Martin-d’Hères, France

4. Alliance for Research on the Mediterranean and North Africa (ARENA), University of Tsukuba, Ibaraki 305-8573, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0046098

Reference47 articles.

1. Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35%

2. CIGS-based solar cells for the next millennium

3. P. Paul, K. Aryal, S. Marsillac, S. Ringel, and A. Arehart, Impact of the Ga/In Ratio on Defects in Cu(In, Ga)Se2 (IEEE, 2016), p. 2246.

4. Control of conduction band offset in wide-gap Cu(In,Ga)Se solar cells

5. Prospects of wide-gap chalcopyrites for thin film photovoltaic modules

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