Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3020532
Reference30 articles.
1. Red-Emitting Semiconductor Quantum Dot Lasers
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4. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
5. Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection
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4. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique;Nanotechnology;2016-12-20
5. Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices;Semiconductor Science and Technology;2015-10-05
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