Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357735
Reference22 articles.
1. Growth of undoped polycrystalline Si by an ultrahigh vacuum chemical vapor deposition system
2. Deposition and device application ofinsituboron‐doped polycrystalline SiGe films grown at low temperatures
3. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
4. Low Temperature Chemical Vapor Deposition of Boron Doped Silicon Films
5. Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐ B 2 H 6 ‐ He Gas System
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3. Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells;Solar Energy Materials and Solar Cells;2011-03
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