Charge-carrier dynamics in polycrystalline thin-film CuIn1−xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis-Reference-Cited by-同舟云学术

Charge-carrier dynamics in polycrystalline thin-film CuIn1−xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

Published:2015-05-13 Issue:18 Volume:117 Page:185102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Kuciauskas Darius¹^ORCID,Li Jian V.¹,Kanevce Ana¹,Guthrey Harvey¹,Contreras Miguel¹,Pankow Joel¹,Dippo Pat¹,Ramanathan Kannan¹

Affiliation:

1. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305, USA

Funder

U.S. Department of Energy (Department of Energy)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4921011

Reference47 articles.

1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

2. Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2

3. A recombination analysis of Cu(In,Ga)Se2 solar cells with low and high Ga compositions

4. Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells

5. Charge carrier dynamics and recombination in graded band gap CuIn1−xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

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