Surface structure of silicon carbide irradiated with helium ions with monoenergy and continuous energy distributions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330468
Reference20 articles.
1. Radiation Blistering in Metals and Alloys
2. Contribution of blistering to first wall erosion in plasma wall contact
3. Radiation blistering of Nb Implanted sequentially with helium ions of different energies (3–500 keV)
4. Damage of niobium surfaces caused by bombardment with 4He+ions of different energies typical for T-20
5. Microstructure of Ni and stainless steel after multiple energy He and D implantation
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1. Enhanced magnetism of SiC with He defects;Physics Letters A;2012-10
2. Effect of solute elements in Ni alloys on blistering under He+ and D+ ion irradiation;Journal of Nuclear Materials;2007-08
3. Blister formation and erosion due to blister fracture of SiC or Si;Journal of Nuclear Materials;2003-03
4. Deposition and optical studies of silicon carbide nitride thin films;Thin Solid Films;2000-07
5. High fluence nitrogen implantation into Zr with energy scanning mode;Radiation Effects and Defects in Solids;1997-06
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