Converse piezoelectric effect induced misfit dislocation scattering in metal/AlGaN/GaN heterostructures
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4799286
Reference19 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications
3. Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology
4. Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz
5. Defects in epitaxial multilayers
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1. Charged surface states scattering in AlGaN/GaN heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2017-06
2. Impact of pressure on transport properties of AlGaN/GaN high electron mobility transistor;Physica E: Low-dimensional Systems and Nanostructures;2015-11
3. Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures;Applied Physics Letters;2014-09-08
4. Charged dislocations in piezoelectric bimaterials;International Journal of Solids and Structures;2014-07
5. Determination of subband energies and 2DEG characteristics of AlxGa1−xN/GaN heterojunctions using variational method;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-03
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