A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulatorn‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures-Reference-Cited by-同舟云学术

A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulatorn‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures

Published:1992-08-15 Issue:4 Volume:72 Page:1416-1422
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Simoen E.,Dierickx B.,Claeys C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.351701

Reference36 articles.

1. Some properties of thin-film SOI MOSFETs

2. SOI design for competitive CMOS VLSI

3. Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature

4. MOST's at cryogenic temperatures

5. Operation of bulk CMOS devices at very low temperatures

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3. The low-frequency noise behaviour of silicon-on-insulator technologies;Solid-State Electronics;1996-07

4. Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-01

5. The Perspectives of Silicon‐on‐Insulator Technologies for Cryogenic Applications;Journal of The Electrochemical Society;1994-09-01