Peaked structure in field‐effect mobility of silicon MOS transistors at very low temperatures-Reference-Cited by-同舟云学术

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Peaked structure in field‐effect mobility of silicon MOS transistors at very low temperatures

Published:1973-11-15 Issue:10 Volume:23 Page:550-552
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pals J. A.,van Heck W. J. J. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1654745

Reference10 articles.

1. Transport Properties of Electrons in Inverted Silicon Surfaces

2. Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise inp-Type Inversion Layers on Oxidized Silicon Surfaces

3. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces

4. Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO2Interface

5. Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers

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1. Fluctuation Kinetics and the Mott Hopping;Localization and Metal-Insulator Transitions;1985

2. Theory of Fluctuation Phenomena in Kinetics;Springer Series in Solid-State Sciences;1985

3. Eigenstates and properties of random systems in one dimension at zero temperature;Physical Review B;1983-10-15

4. Resonance tunneling and localization spectroscopy;Solid State Communications;1983-02

5. Electronic properties of two-dimensional systems;Reviews of Modern Physics;1982-04-01

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