Photodetection around 10 μm wavelength using s-p transitions in InAs/AlAs/AlGaAs self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3327002
Reference22 articles.
1. Infrared photodetection with semiconductor self-assembled quantum dots
2. Intraband magnetospectroscopy of singly and doubly chargedn-type self-assembled quantum dots
3. Comparison of the electronic structure ofInAs/GaAspyramidal quantum dots with different facet orientations
4. Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots
5. Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory
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1. Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral potential barrier layers;Optics Express;2023-09-06
2. Emission directionality of electronic intraband transitions in stacked quantum dots;Physical Review B;2021-09-29
3. Self-Assembled Quantum Dot Photodetector: A Pathbreaker in the Field of Optoelectronics;Quantum Dot Photodetectors;2021
4. Binary and ternary capped In(Ga)As/GaAs self-assembled quantum dots: An annealing study;Superlattices and Microstructures;2018-05
5. Resonant Cavity-Enhanced Multicolor Polarization Sensitive Quantum Dot Infrared Photodetector;IEEE Journal of Quantum Electronics;2016-08
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