Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission-Reference-Cited by-同舟云学术

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Author:

Lekhal K.¹,Damilano B.¹^ORCID,Ngo H. T.²^ORCID,Rosales D.²,De Mierry P.¹,Hussain S.¹³,Vennéguès P.¹,Gil B.²

Affiliation:

1. CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560, France

2. Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier, France

3. Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2, France

Funder

Agence Nationale de la Recherche (L' Agence Nationale de la Recherche)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference28 articles.

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