Study of band alignment at MoS2/SiO2 interfaces grown by pulsed laser deposition method-Reference-Cited by-同舟云学术

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Study of band alignment at MoS2/SiO2 interfaces grown by pulsed laser deposition method

Published:2021-03-21 Issue:11 Volume:129 Page:115303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sinha Sneha¹,Kumar Sujit²,Arora Sunil K.¹^ORCID,Jha S. N.³^ORCID,Kumar Yogesh³,Gupta Vinay²^ORCID,Tomar Monika⁴^ORCID

Affiliation:

1. Centre for Nanoscience and Nanotechnology, Block-II, South Campus, Panjab University, Sector-25, Chandigarh 160014, India

2. Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India

3. Beamline Development and Application Section, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India

4. Department of Physics, Miranda House, University of Delhi, Delhi 110007, India

Funder

DST-INSPIRE, Govt. of India

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039463

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. 2D transition metal dichalcogenides

3. Band offsets and heterostructures of two-dimensional semiconductors

4. Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction

5. The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing the photocatalytic activity of Bi2MoO6 by constructing tailored composites through a turnable amount of MoS2;Journal of Materials Science: Materials in Electronics;2024-04

2. A first-principles study of Janus monolayer MXY (M = Mo, W; X, Y = S, Se, Te)/SiO2 van der Waals heterojunctions for integrated optical fibers;Advanced Composites and Hybrid Materials;2022-09-24

3. Fabrication of Highly Sensitive Room Temperature Operated No2 Gas Sensor Using Back Gated 2d-Mos2 Fets;SSRN Electronic Journal;2022

4. Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2 FET;Nanotechnology;2021-09-02

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