Chemical and structural transformation of sapphire (Al2O3) surface by plasma source nitridation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370606
Reference14 articles.
1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
5. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
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2. Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films;Applied Physics Letters;2020-05-26
3. Chemical bonding of nitrogen formed by nitridation of crystalline and amorphous aluminum oxide studied by X-ray photoelectron spectroscopy;RSC Advances;2020
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