Chemical and structural transformation of sapphire (Al2O3) surface by plasma source nitridation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370606
Reference14 articles.
1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
5. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition;Crystal Research and Technology;2024-05-30
2. Surface modification of aluminum and silicon carbide during the nitrogen-induced self-forming Al composite (NISFAC) manufacturing process;Journal of Materials Science;2022-05-10
3. Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films;Applied Physics Letters;2020-05-26
4. Chemical bonding of nitrogen formed by nitridation of crystalline and amorphous aluminum oxide studied by X-ray photoelectron spectroscopy;RSC Advances;2020
5. Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy;Physical Review Materials;2019-06-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3