FePdB layer for perpendicular magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3517482
Reference20 articles.
1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
2. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
3. Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
4. MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
5. Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes
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