Affiliation:
1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology 1 , Guangzhou 510006, China
2. Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology 2 , Guangzhou 510006, China
Abstract
In this paper, a broadband metamaterial absorber consisting of the doped silicon substrate and the square array of doped silicon covered by a SU-8 layer is presented. The target structure achieves an average absorption of 94.42% in the studied frequency range (0.5–8 THz). In particular, the structure exceeds 90% absorption in the frequency range of 1.44–8 THz, which is a significant increase in bandwidth relative to reported devices of the same type. Next, the near-perfect absorption of the target structure is verified by the impedance matching principle. Furthermore, through the analysis of the electric field distribution inside the structure, the physical mechanism of its broadband absorption is investigated and explained. Finally, the impact of fluctuations in the incident angle, polarization angle, and structural parameters on the absorption efficiency is examined at length. The analysis shows that the structure has characteristics, such as polarization insensitivity, wide-angle absorption, and good process tolerance. The proposed structure is advantageous for applications in THz shielding, cloaking, sensing, and energy harvesting.
Funder
Science and Technology Program of Guangzhou
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Cited by
3 articles.
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