Recovery Behavior of Si(Li) Junctions after Gamma Irradiation-Reference-Cited by-同舟云学术

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Recovery Behavior of Si(Li) Junctions after Gamma Irradiation

Published:1968-12 Issue:13 Volume:39 Page:6023-6028
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ammerlaan C. A. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1656108

Reference16 articles.

1. Ion Drift in an n‐p Junction

2. Thick junction radiation detectors made by ion drift

3. Characteristics of p‐i‐n Junctions Produced by Ion‐Drift Techniques in Silicon

4. The preparation of lithium-drifted semiconductor nuclear particle detectors

5. Growth of Silicon Crystals Free from Dislocations

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Damage;Semiconducting Devices;1976

2. Gamma Irradiation of Lithium‐Drifted Silicon;Journal of Applied Physics;1971-04

3. Effect of electron irradiation on lithium-doped silicon;Journal of Physics and Chemistry of Solids;1970-11

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