Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

Author:

Liu Xinke1,He Jiazhu1,Liu Qiang2,Tang Dan1,Wen Jiao2,Liu Wenjun3,Yu Wenjie2,Wu Jing4,He Zhubing5,Lu Youming1,Zhu Deliang1,Liu Wenjun1,Cao Peijiang1,Han Sun1,Ang Kah-Wee6

Affiliation:

1. College of Materials Science and Engineering, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, People's Republic of China

2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050, People's Republic of China

3. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai 200433, People's Republic of China

4. Department of Physics, National University of Singapore, 21 Lower Kent Ridge Road, 117576 Singapore

5. Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055, People's Republic of China

6. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore

Funder

Nanshan District key lab for biopolymer and safety evaluation

National Natural Science Foundation of China

National Science Foundation of Shenzhen University

National Science Foundation of shenzhen University

Shenzhen Engineering laboratory for advanced technology of ceramics

National Natural Science Foundation of China (NSFC)

Science and Technology Commission of Shanghai Municipality (STCSM)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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